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BC548B is a NPN silicon amplifier transistor with 210Kb collector-base breakdown voltage and 50Kb emitter-base breakdown voltage. Download the PDF datasheet from ON Semiconductor website or view the HTML version for more details and similar products.
Find 42 datasheets of BC548B, a NPN silicon amplifier transistor, from different manufacturers and distributors. Compare specifications, features and applications of BC548B transistors.
ManufacturerDatasheetDescriptionON Semiconductor140Kb/6PAmplifier Transistors (NPN Silicon) 1996 ...Micro Commercial Compon...301Kb/5PNPN Silicon Amplifier Transistor 625mWSiemens Semiconductor G...210Kb/6PNPN Silicon TransistorsFairchild Semiconductor50Kb/4PSwitching and Applications Switching and ...BC548B is an NPN general purpose amplifier with high-voltage switching capability. Download the PDF datasheet from Fairchild Semiconductor or view the HTML version with product details and similar parts.
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BC548B, C Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BC546 BC547 BC548 VCEO 65 45 30 Vdc Collector - Base Voltage BC546 BC547 BC548 VCBO 80 50 30 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C ...
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BC548B is a Pb-free package device with a collector-base breakdown voltage of 65 V and a collector-emitter saturation voltage of 0.25 V. It has a current gain of 110 at IC = 10 mA and a bandwidth of 300 MHz at IC = 10 mA.
onsemi BC548B technical specifications, attributes, and parameters. Bulk Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 2mA 5V 100mA 500mW 300MHz. Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92.
November 2014. NPN Epitaxial Silicon Transistor. Features. Switching and Amplifier. High-Voltage: BC546, VCEO = 65 V. Low-Noise: BC549, BC550. Complement to BC556, BC557, BC558, BC559, and BC560. TO-92.
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