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1 de mar. de 2024 · To further confirm the successful deposition of pure VO 2 nanoparticle-films, XRD was measured at room temperature as shown Fig. 4 b). For all analysis of the nanoparticle-film layer, the peak at 27.5 can be indexed to (0 1 1) plane and 44.4 can be indexed to (0 2 1) plane of VO 2 (PDF#00-043-1051).
HBM 양산기법 두 가지, TC-NCF VS MR-MUF. 현재 HBM의 경우, TC-NCF와 MR-MUF라는 2가지 공법을 활용하여 양산한다. Underfill 및 Molding에 있어 특수 필름 (NCF)을 활용하는지, 액체성 소재 (MUF)를 활용하는지가 가장 큰 차이점이다. Fab 공정은 큰 차이가 없으며 Bumping/Stacking ...
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17 de jan. de 2017 · Control of molecular ordering and packing of π-conjugated molecules in the solid state is crucial for enhancing the charge transport properties in organic electronics. A series of quinoidal materials based on different alkyl-chain branching positions on the thieno[3,4-c]pyrrole-4,6-dione moiety flanked with
5 de dez. de 2020 · The stacking faulted Al 0·1 CoCrFeNi HEA thin films display a size-dependent strain rate sensitivity. Reducing the film thickness enlarges the strain rate sensitivity, while the activated volume shows the converse trend. This can be interpreted by considering the grain boundary and stacking fault-related thermally activated sources.
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30 de set. de 2020 · When the bias is applied on M3 (Ag/SnO 2 /IGZO/Pt structure stacking sequence), the Ag ions initially migrate in the SnO 2 thin film, followed by in IGZO thin film. Fig. 3 show the two-step filament formation which explains the migration of Ag ions and redox reaction rate at top and bottom electrode of thin films as well as in turn the formation of the conical shaped conduction filament as ...
