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Professor Rachel Oliver is Director of the Cambridge Centre for Gallium Nitride. She leads research projects across the full range of the Centre’s activities, and her personal passion is understanding how the small scale structure of nitride materials effects the performance and properties of devices.
Advances in AFM for the electrical characterization of semiconductors. RA Oliver. Reports on Progress in Physics 71 (7), 076501. , 2008. 231. 2008. Carrier localization mechanisms in In Ga N/GaN quantum wells. D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ... Physical Review B 83 (11), 115321.
As Director of the Cambridge Centre for Gallium Nitride, Prof Oliver’s research interests focus on the characterization and exploitation of nanoscale structures in GaN-based materials. The broad aim of my work is to achieve improved performance in GaN-based electronic and optoelectronic devices and to develop and implement novel device concepts.
Rachel Oliver (scientist) Rachel Angharad Oliver FREng FIMMM is a Professor of Materials Science at the University of Cambridge and a fellow of Robinson College, Cambridge. She works on characterisation techniques for gallium nitride materials for dark-emitting diodes and laser diodes.
GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft. Superconductor Science and Technology. 2023-09-01 | Journal article. DOI: 10.1088/1361-6668/ace5e7. Contributors : Aaron Wadsworth; Duleepa J Thrimawithana; Lei Zhao; Martin Neuburger; Rachel A Oliver; David J Wallis. Show more detail.
Photography: Nick Saffell. When she’s not making atomic-scale changes to create super-efficient light bulbs and cut carbon emissions, Professor Rachel Oliver has her sights set on helping to level-up equality and diversity in science. We speak to her on International Day of Women and Girls in Science (11 February).
Rachel Oliver, Professor of Materials Science at University of Cambridge, speaks to Real Scientists Nano about her research work on the small scale (nano) structure of gallium nitride in existing and new devices.
